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| inchange semiconductor isc product specification isc silicon npn power transistors 2SD427 description collector-emitter breakdown voltage- : v (br)ceo = 120v(min) high power dissipation- : p c = 80w(max)@t c =25 complement to type 2sb557 applications designed for power amplifier applications. recommended for 50w high-fidelity audio frequency amplifier output stage. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 5 v i c collector current-continuous 8 a i e emitter current-continuous -8 a p c collector power dissipation @t c =25 80 w t j junction temperature 150 t stg storage temperature -65~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors 2SD427 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 0.1a; i b = 0 120 v v (br)ebo emitter-base breakdown voltage i e = 10ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 0.5a b 2.5 v v be (on) base-emitter on voltage i c = 5a; v ce = 5v 2.0 v i cbo collector cutoff current v cb = 60v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 0.1 ma h fe-1 dc current gain i c = 1a; v ce = 5v 40 140 h fe-2 dc current gain i c = 5a; v ce = 5v 20 c ob output capacitance i e = 0; v cb = 10v; f= 1mhz 170 pf f t current-gain?bandwidth product i c = 1a; v ce = 5v 5 mhz ? h fe- 1 classifications r o 40-80 70-140 isc website www.iscsemi.cn |
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